attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) = 50v esd human body model (class 0) = 200v refer to avago application note a004r: electrostatic discharge, damage and control. note: msl rating = level 2a ammp-6233 18 to 32 ghz gaas low noise amplifer data sheet features ? surface mount package, 5.0 x 5.0 x 1.25 mm ? integrated dc block and choke ? 50 ? input and output match ? single positive supply pin ? no negative gate bias specifcations (vd=3.0v, idd=65ma) ? broadband rf from 18 to 32 ghz ? high gain of 23db ? low gain flatness: 1db ? typical noise figure of 2.6 db ? typical oip3 of 19dbm applications ? microwave radio systems ? satellite vsat, dbs up/down link ? lmds & pt-pt mmw long haul ? broadband wireless access (including 802.16 and 802.20 wimax) ? wll and mmds loops functional block diagram description avago technologies ammp-6233 is a high gain, low- noise amplifier that operates from 18 ghz to 32 ghz. it has a 3 db noise figure, over 20 db of gain and designed to be an easy-to-use drop-in with any surface mount pcb application. popular applications include micro - wave radios, 802.16 and satellite vsat or dbs receivers. the fully integrated microwave circuit eliminated the complex tuning and assembly processes typically re - quired by hybrid (discrete-fet) amplifiers. the surface mount package allows elimination of chip & wire as - sembly for lower cost. the device has 50 ? input and output match and is unconditionally stable. the mmic has fully integrated input and output dc blocking ca - pacitors and bias choke. the backside of the package is both rf and dc ground that simplifies the assembly process. it is fabricated in a phemt process to provide exceptional low noise and gain performance. package diagram 1 2 3 8 4 7 6 5 pin function 1 2 vdd 3 4 rfout 5 6 7 8 rfin 1 2 3 7 5 6 4 8 rf in rf out vd nc nc nc nc nc
2 electrical specifcations 1. small/large -signal data measured in a fully de-embedded test fxture form ta = 25c. 2. pre-assembly into package performance verifed 100% on-wafer per ammc-6220 published specifcations. 3. this fnal package part performance is verifed by a functional test correlated to actual performance at one or more frequencies. 4. specifcations are derived from measurements in a 50 ? test environment. aspects of the amplifer performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. 5. all tested parameters guaranteed with measurement accuracy +/-0.5 db/ dbm for the 6 to 20 ghz, +/-0.75 db/ dbm for the 20 to 33 ghz range and +/- 1.0db/ dbm for the 33 to 50 ghz range 6. nf is measure on-wafer. additional bond wires (-0.2nh) at input could improve nf at some frequencies. table 1. rf electrical characteristics ta=25c, vdd=3.0v, idd=65ma, zin=zo=50 ? 18ghz 26ghz 29ghz parameter min typ max min typ max min typ max unit small signal gain, gain 19 23.2 20.8 24.4 20 23.6 db noise figure into 50 ?, nf 2.6 3.6 2.2 3.2 2.6 3.5 db output power at 1dbgain compression, p1db 8 dbm output third order intercept point, oip3 18 dbm isolation, iso -45 db input return loss, rlin -10 db output return loss, rlout -13 db table 2. recommended operating range 1. ambient operational temperature ta = 25c unless otherwise noted. 2. channel-to-backside thermal resistance (tchannel (tc) = 34c) as measured using infrared microscopy. thermal resistance at backside temperature (tb) = 25c calculated from measured data. description min. typical max. unit comments drain supply current, id 40 65 90 ma vd = 3 v, under any rf power drive and temperature drain supply voltage, vd 3 5 v table 3. thermal properties parameter test conditions value thermal resistance, q ch-b channel-to-backside thermal resistance tchannel(tc)=34c thermal resistance at backside temperature tb=25c q ch-b = 27 c/w absolute minimum and maximum ratings table 4. minimum and maximum ratings description min. max. unit comments drain to ground supply voltage, vd 5.5 v drain current , id 100 ma rf cw input power 10 dbm cw channel temperature +150 c storage temperature -65 +150 c maximum assembly temperature 260 c 20 second maximum note 1. operation in excess of any one of these conditions may result in permanent damage to this device.
3 figure 1. gain ammp-6233 typical performance [1], [2] (ta = 25 c, vdd=3v, idd=65ma, zin = zout = 50 ? unless noted) figure 3. input return loss figure 5. output return loss figure 2. noise figure figure 4. output p-1db and output ip3 figure 6. isolation 0 5 10 15 20 25 15 20 25 30 35 frequency (ghz) s21 (db) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 18 20 22 24 26 28 30 32 frequency (ghz) noise figure (db) -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 frequency (ghz) s11 (db) 0 5 10 15 20 25 18 20 22 24 26 28 30 32 frequency (ghz) op1db & oip3 (dbm) op-1db oip3 -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 frequency (ghz) s22 (db) -60 -50 -40 -30 -20 -10 0 15 20 25 30 35 frequency (ghz) s12 (db)
4 note: 1. s-parameters are taken with the evaluation board as shown in figure 14. effects of board and connector are included in the graphs. loss of board and connector are de-embeded from gain data. 2. noise figure is measured with a 3-db pad at the input of the device. losses are de-embeded from the data shown in figure 2, 8 and 10. figure 7. gain over vdd ammp-6233 typical performance (cont) [1], [2] (ta = 25 c, vdd=3v, idd=65ma, zin = zout = 50 ? unless noted) figure 9. gain over temperature figure 11. idd over vdd figure 8. noise figure over vdd figure 10. noise figure over temperature figure 12. output ip3 over vdd 0 5 10 15 20 25 16 18 20 22 24 26 28 30 32 frequency (ghz) s21 (db) 3v 4v 5v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 18 20 22 24 26 28 30 32 frequency (ghz) noise figure (db) 3v 4v 5v 0 5 10 15 20 25 16 18 20 22 24 26 28 30 32 frequency (ghz) s21 (db) 25c -40c 85c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 18 20 22 24 26 28 30 32 frequency (ghz) noise figure (db) -40c +25c +85c 60 65 70 75 80 3 3.5 4 4.5 5 vdd (v) idd (ma) 0 5 10 15 20 25 18 20 22 24 26 28 30 32 frequency (ghz) oip3 (dbm) 3v 4v 5v
5 ammp-6233 application and usage figure 13. application of ammp-6233 figure 14. evaluation / test board (available to qualifed customer re - quests) figure 15. simplifed lna schematic biasing and operation the ammp-6233 is normally biased with a positive drain supply connected to the vdd pin through a 0.1uf bypass capacitor as shown in figure 13. the recom - mended drain supply voltage is 3v. it is important to have 0.1uf bypass capacitor, and the capacitor should be placed as close to the component as possible. input and output ports are dc-blocked. impedance matching at input and output ports are achieved on-chip, there - fore, no extra external component is needed. aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conju - gate, linearity, or low noise ( opt) matching no ground wires are needed because all ground connections are made with plated through-holes to the backside of the package. refer the absolute maximum ratings table for allowed dc and thermal condition in vc c ou t 1 2 3 8 4 7 6 5 rfin rfout vdd 0.1uf ammp-6233
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2013 avago technologies. all rights reserved. obsoletes av01-0666en av02-0489en - july 8, 2013 ammp-6233 part number ordering information part number devices per container container ammp-6233-blkg 10 antistatic bag ammp-6233-tr1g 100 7 reel ammp-6233-tr2g 500 7 reel typical scattering parameters please refer to for typical scattering parameters data. package dimension, pcb layout and tape and reel information please refer to avago technologies application note 5520, amxp-xxxx production assembly process (land pattern a).
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